An investigation was made of the interaction of intrinsic and extrinsic point defects with stacking faults. The calculations were carried out by using ab initio total energy methods. The results showed that the formation energies of intrinsic defects and impurities (P, As, Al) were lower at the stacking fault, as compared with those of the same defects in the general crystal environment. It was concluded that stacking faults should have a large concentration of defects, and should play an important role in dislocation motion.

Effects of Extended Defects on the Properties of Intrinsic and Extrinsic Point Defects in Silicon J.F.Justo, A.Antonelli, T.M.Schmidt, A.Fazzio: Physica B, 1999, 273-274, 473-5