The effect of B doping upon the position of oxidation-induced stacking-fault rings during Czochralski growth was described by using a model, for point-defect dynamics, which took account of the role played by B. The important interactions between B and intrinsic point defects were selected on the basis of tight-binding estimates for the formation energies of B plus point-defect structures. The entropies of formation of such species were obtained by fitting the model predictions to experimental data on oxidation-induced stacking-fault ring dynamics. The model successfully predicted the dynamics under various doping and growth conditions. The effect of B upon the rings was attributed to the retardation of point defect recombination at temperatures near to the melting point; caused by the dynamic storage of self-interstitials in complexes with B.

Boron-Retarded Self-Interstitial Diffusion in Czochralski Growth of Silicon Crystals and its Role in Oxidation-Induced Stacking-Fault Ring Dynamics T.Sinno, H.Susanto, R.A.Brown, W.Von Ammon, E.Domberger: Applied Physics Letters, 1999, 75[11], 1544-6