The influence of impurities on the kinetics of split-dislocation cross slip caused by a change in the stacking-fault energy was studied theoretically. It was shown that the fluctuations in the impurity composition of a crystal made a considerable contribution to the kinetics of dislocation cross-slip. The activation-energy spectrum and the average frequency of the processes of dislocation cross slip were calculated for a model of random impurity distribution in a crystal. The calculation showed that the fluctuations in impurity concentration, reducing the stacking-fault energy, played an important role in the low-temperature region.

Fluctuations of Impurity Composition and their Role in Dislocation Cross Slip in Crystals. B.V.Petukhov: Crystallography Reports, 2005, 50[5], 801-7