The migration of Ag in CdxHg1-xTe was studied. In samples with x-values of between 0.55 and 0.8, the Ag-doped material was p-type when diffused at temperatures below 125C. The results showed that the higher the Hg content or hole concentration, the faster was the Ag diffusivity. The results were explained by assuming that Ag was present as 2 species with opposite charges. One of these was supposed to be predominant but essentially immobile, while the other species diffused rapidly. These forms equilibrated within a few seconds at room temperature. This, in turn, could be explained in terms of Ag-Hg complex formation. It was concluded that, if both forms of Ag were bound to Hg, then this could explain the marked effect of the Hg content upon the diffusion behavior.

Diffusion of Ag in Cd-Rich CdxHg1-xTe (x = 0.55-0.8). I.Lyubomirsky, V.Lyakhovitskaya, R.Triboulet, D.Cahen: Journal of Electronic Materials, 1997, 26[2], 97-105. See also: Journal of Crystal Growth, 1996, 159, 1148-51