It was shown that the transient ion drift method, which was based upon studying the junction capacitance under a constant reverse bias, could be used not only for the measurement of the diffusion coefficient of mobile impurities, but also for the estimation of the concentration of mobile species as part of the total dopant density. This was demonstrated for CdTe which was doped Ag. It was also shown that the transient ion drift method could be used if the mobile ions were major dopants. This was demonstrated by using Schottky barriers on CdTe, and p-n junction devices in CdHgTe. The value which was obtained for the diffusion of Ag (1.4 x 10-12) agreed well with reported values which had been obtained by using other methods.

I.Lyubomirsky, M.K.Rabinal, D.Cahen: Journal of Applied Physics, 1997, 81[10], 6684-91