Serial sectioning and radiotracer techniques were used to study the diffusion of 110Ag in single crystals of Hg0.8Cd0.2Te in the absence or presence of an electric field. It was found that the tracer diffusion data at 200 to 400C could be described by:

D (cm2/s) = 1.6 x 10-1 exp[-1.2(eV)/kT]

In electric fields of 0.1 to 1V/cm, at 160 to 180C, the diffusivity on the cathode side was 8.0 x 10-13cm2/s while that on the anode side was 2.0 x 10-11cm2/s:

Effect of External Electrical Field on the Diffusion of Impurities in CdHgTe. F.A.Zaitov, G.M.Shalyapina, L.M.Shalyapina, O.V.Muknina: Fizika Tverdogo Tela, 1974, 16[4], 1207-8