The diffusion of Al from the vapor phase into Cl-doped CdTe was studied at 570 to 700K. The concentration profiles were then determined by measuring the Hall constant during layer removal by etching. It was found that the diffusivity of Al could be described by:

D (cm2/s) = 6.76 x 101 exp[-1.43(eV)/kT]

The results were sensitive to the reactivity of the surface.

G.S.Pavlova, E.L.Kanunova, J.M.Ivanov: Izvestiya Akademii Nauk SSSR - Neorganicheskie Materialy, 1991, 27[2], 263-6. (Inorganic Materials, 1991, 27[2], 190-3)