The properties of As in this material were predicted by using  ab initio  calculations and a statistical theory. Predictions of the amphoteric nature of As were in good agreement with experimental results for samples which had been grown by using liquid-phase epitaxy or molecular-beam epitaxy. An experimentally observed dependence of As diffusion upon the Hg partial pressure was also explained by the results.

M.A.Berding, A.Sher: Applied Physics Letters, 1999, 74[5], 685-7