The results of controlled doping of epitaxial layers were presented. The layers were obtained by the evaporation–condensation–diffusion method of isothermal growth. The process of auto-diffusion from the solid phase was investigated. This process consisted of the diffusion of As dopants from a CdTe substrate and into the grown epitaxial layer. Two types of CdTe substrate (uniformly doped during synthesis, and unalloyed with ion-implanted surface layer) were used as As sources. A comparative analysis of galvanomagnetic measurements and secondary ion mass spectra was carried out. The results indicated a very high (almost 100%) electrical activity of As dopants in the epitaxial grown layer.

Controlled Arsenic Diffusion in Epitaxial CdxHg1-xTe layers in the Evaporation–Condensation–Diffusion Process. A.Vlasov, V.Pysarevsky, O.Storchun, A.Shevchenko, A.Bonchyk, H.Pokhmurska, A.Barcz, Z.Swiatek: Thin Solid Films, 2002, 403-404, 144-7