A study was made of peculiarities of the high-temperature diffusion of As implanted into variable-gap epitaxial CdHgTe layers. The non-monotonic shape of the diffusion profiles could be explained by the presence of an inhomogeneous internal electric field related to the variable band structure of the epitaxial layers.

The Effect of Internal Electric Field on the High-Temperature Diffusion of Arsenic in Variable-Gap Epitaxial CdHgTe Layers. A.P.Vlasov, L.S.Monastyrskiĭ, B.S.Sokolovskiĭ, G.A.Ilchuk: Technical Physics Letters, 2004, 30[11], 970-2