The incorporation of As, and the doping of layers which had been grown by means of molecular beam epitaxy, were considered. The incorporation of As into molecular beam epitaxial material was carried out in 2 different ways. One method involved  ex situ  As diffusion on In-doped molecular beam epitaxial layers at 450C. In these layers, the As redistribution had a multi-component nature. It was found that the diffusion coefficient was equal to between 10-13 and 3 x 10-13cm2/s at 450C. Differential Hall, and fabricated p-n junction, data suggested that - during high-temperature annealing - As was preferentially substituted into Te sub-lattices and acted as an acceptor impurity. In the other method, As was successfully incorporated - during molecular beam epitaxial growth - as an acceptor (planar doping approach).

P.S.Wijewarnasuriya, S.S.Yoo, J.P.Faurie, S.Sivananthan: Journal of Electronic Materials, 1996, 25[8], 1300-5