Diffusion in Hg0.82Cd0.18Te, grown by liquid-phase epitaxy, was studied here for the first time by using both radiotracer and secondary ion mass spectrometry techniques. The samples were diffused at 400C under equilibrium Hg vapour pressure conditions. It was found that there was a good agreement between the radiotracer and secondary ion mass spectrometry profiles, and the diffusion coefficient at the above temperature was deduced to be 8 x 10-15cm2/s.

J.E.Falconer, H.D.Palfrey, G.W.Blackmore: Journal of Crystal Growth, 1990, 100[1-2], 275-8