A previous model for As diffusion in Hg0.8Cd0.2Te was developed in order to obtain a relationship which gave the As diffusivity as a function of temperature and Hg pressure. Close agreement was obtained with experimental data, and a quantitative expression was obtained for [AsHg ]/[AsTe'] as a function of temperature and Hg pressure.

D.Shaw: Semiconductor Science and Technology, 1994, 9[9], 1729-32