Values at 400 and 425C, which had previously been obtained for a model of As diffusion in Hg0.78Cd0.22Te, were revised in order to take account of more recent experimental data that covered a wider range of Hg pressures at these temperatures. The conditions which were necessary, for the As diffusivity to be concentration-dependent, were considered. A previous defect model for As was shown to predict a diffusion behavior which disagreed with experimental results.

D.Shaw: Semiconductor Science and Technology, 1996, 11[1], 55-7