High-temperature in situ galvanomagnetic measurements were performed at 500 to 700C under Cd pressures, PCd, which were an order of magnitude below or above the ideal stoichiometry line. The temporal evolution of the samples following a step-like change in PCd was analyzed and a chemical diffusion relationship of the form:

D (cm2/s) = 5 x 100 exp[-1.12(eV)/kT] was deduced. Neither the magnitude of PCd nor the direction (increase or decrease) of the step change in PCd had any noticeable effect upon D. A surface conduction, which depended upon PCd, was reported below 600C.

Chemical Self-Diffusion in CdTe. R.Grill, L.Turjanska, J.Franc, E.Belas, I.Turkevych, P.Höschl: Physica Status Solidi B, 2002, 229[1], 161-4

Figure 8

Diffusivity of Cd in Cu-Doped CdTe at 820C