The self-diffusion of Cd in Cu-doped material was studied, as a function of the Cu concentration, at 523 or 820C. It was found that some of the diffusion profiles had 2 components, and could be fitted by a using an expression that consisted of the sum of 2 complementary error functions. The others had a single component and were fitted by using a single complementary error function. It was suggested that this implied that diffusion was rate-limiting. It was also noted that the diffusivity of Cd increased linearly with the Cu concentration, up to 3 x 1018/cm3, at both temperatures. However, at 820C the Cd diffusivity exhibited a sudden increase at higher concentrations (figure 8).

M.U.Ahmed, E.D.Jones, N.M.Stewart: Journal of Crystal Growth, 1996, 160[1-2], 36-40

Figure 9

Diffusivity of Cd in CdTe

(filled point: Astles & Blackmore [1986], dotted line: Borsenberger & Stevenson [1968],

dotted line: extrapolation of Whelan & Shaw [1967])