Diffusion annealing was carried out at temperatures ranging from 200 to 700C in evacuated silica ampoules, using a CdCl2 diffusion source under saturated vapor pressure conditions. The concentration profiles were then measured by using a radiotracer sectioning technique. It was found that the profiles comprised 4 parts, and were analyzed by using a sum of 4 complementary error functions. The fastest-diffusing component of the diffusivity (figure 11) agreed with previous data.

E.D.Jones, J.Malzbender, J.B.Mullin, N.Shaw: Journal of Physics - Condensed Matter, 1994, 6[37], 7499-504