Diffusion annealing was carried out, at 20 to 700C, in evacuated silica ampoules using a CdCl2 source under saturated vapor pressure conditions. The concentration profiles were measured by using radiotracer sectioning or secondary-ion mass spectrometry techniques. It was found that, in most cases, the profiles comprised 4 parts. These could be fitted by using a sum of 4 complementary error functions. The fitting procedure was merely empirical, but was satisfactory for the description of the diffusion profiles and the behavior of the diffusivities as a function of various parameters.

J.Malzbender, E.D.Jones, N.Shaw, J.B.Mullin: Semiconductor Science and Technology, 1996, 11[5], 741-7