Ion drift in the electric field of a depleted region was studied, near to room temperature, in intentionally Cu-doped p-type bulk Cd0.7Hg0.3Te. Capacitance-voltage measurements were used to investigate the drift of interstitial Cu. Diffusion data for Cu were obtained by using classical theoretical models that were based upon the dissociation and formation of acceptor-donor complexes.

J.F.Barbot, B.O.Wartlick, L.F.Pinhede, C.Blanchard: Journal of Electronic Materials, 1996, 25[8], 1172-5