A method was presented for the determination of the diffusivities of donors at relatively low temperatures in p-type semiconductors. The method was based upon capacitance transient measurements, performed at various temperatures. The law which described the capacitance transient was determined, and this then permitted the determination of the diffusion coefficient. It was found that the data (figure 12) for Cu diffusion in Cd0.7Hg0.3Te,

D (cm2/s) = 9.0 x 10-9exp[-0.17(eV)/kT]

were in good agreement with published results.

B.O.Wartlick, J.F.Barbot, C.Blanchard: Philosophical Magazine B, 1997, 75[5], 639-46

Figure 12

Diffusivity of Cu in CdHgTe