The diffusion of Cu into monocrystalline material was studied by measuring the decrease in thickness of vapour-deposited layers due to diffusion. The data for 290 to 350C could be described by:

D (cm2/s) = 8.2 x 10-8 exp[-0.64(eV)/kT]

H.Mann, G.Linker, O.Meyer: Solid State Communications, 1972, 11[3], 475-9