The diffusion of this impurity in Hg0.8Cd0.2Te was studied by using tracer techniques. It was shown that the migration mechanism depended upon the size of the atoms. Empirical equations were derived for calculating the activation energy and pre-exponential factor.

A.V.Gorshkov, L.A.Bovina, V.I.Stafeev: Fizika i Tekhnika Poluprovodnikov, 1996, 30[7], 1192-204 (Semiconductors, 1996, 30[7], 629-34)