A study was made of the intensity distribution, through the thickness of wafer samples, of the 4.2K photoluminescence of excitons trapped by donors and acceptors, and of donor-acceptor radiative recombination, after brief annealing in molten Ga in an evacuated cell or in Cd vapor. It was found that the transformation of defects through the thickness was non-uniform, and could be divided into 3 regions. In region I, diffusion of the donor impurity, GaCd, occurred via replacement of the residual group-I dopant, LiCd. In region II, there was an oppositely directed diffusion (towards the surface) of some of the Li which was originally located in LiCd-LiCd complexes. In region III, there was a uniform thermal dissociation of such complexes, or of Te inclusions.

V.N.Babentsov, A.I.Vlasenko, N.I.Tarbaev: Fizika i Tekhnika Poluprovodnikov, 1995, 29[2], 328-34 (Semiconductors, 1995, 29[2], 165-8)

Figure 14

Diffusivity of Hg in HgxCd1-xTe

(circles: x = 0.03, squares: x = 0.004)