The donor-doping of IIIA elements was used to grow Hg1-xCdxTe hetero-layers that consisted of a wide band-gap (x = 0.4) layer on top of a narrow band-gap layer. Both were grown onto (111)B CdTe substrates by liquid-phase epitaxy from a Te-rich solution. The segregation coefficient of Ga was a decreasing function of the dopant concentration in the growth solution. The diffusion coefficient of Ga, as deduced by fitting electron concentration profiles in Ga-doped n-type layer, was about 10-12cm2/s.

T.J.Yang, J.S.Chen, C.D.Chiang, T.B.Wu: Journal of Crystal Growth, 1995, 154[1-2], 34-40