It was found that the amount of H which was incorporated into metalorganic chemical vapor deposited CdTe layers varied from 1.5 x 1018 to 3 x 1017/cm3 as the growth temperature was increased from 250 to 365C. Complete H out-diffusion was found after annealing at 350C for 1200s. The diffusion of D into CdTe at 220C via a plasma protecting SiO2 cap layer revealed diffusion coefficients which ranged from 2 x 10-14 to 7 x 10-14cm2/s.

L.Svob, Y.Marfaing, B.Clerjaud, D.Cote, D.Ballutaud, B.Theys, R.Druilhe, W.Kuhn, H.Stanzl, W.Gebhardt: Materials Science Forum, 1994, 143-147, 447-52