The migration of Hg under saturated vapor pressure conditions was studied at temperatures ranging from 160 to 403C. Two-component profiles were observed (table 3) and the diffusion was rate-limited. All of the Arrhenius plots comprised 2 straight lines, with a sudden change of gradient at 275C. This was attributed to a change in the diffusion mechanism.

M.U.Ahmed, E.D.Jones, J.B.Mullin, N.M.Stewart: Journal of Crystal Growth, 1996, 159, 1141-7

 

Table 3

Arrhenius Parameters for Hg Diffusion in CdTe

D0 (cm2/s)

E(eV)

Component

3.4 x 10-11

0.60

below 275C

3.5 x 10-4

1.46

above 275C

1.0 x 10-11

0.36

below 275C

3.4 x 10-7

0.97

above 275C