The use of 3 standard defect etches for CdTe (Nakagawa’s reagent, ferric chloride, Inoue’s EAg-1 reagent) was compared. It was demonstrated, by measuring  etch-pit densities, that Inoue’s reagent could be successfully used for making comparisons of slices which had been subjected to various physical treatments. In addition, a graph of the Hg diffusivity (obtained using radiotracer-sectioning techniques) versus the etch-pit density showed that a 10-fold increase (from 4 x 104 to 3 x 105/cm2) in the surface etch-pit density produced an increase, by a factor of 4, in the diffusivity of Hg.

M.U.Ahmed, E.D.Jones, J.B.Mullin, N.M.Stewart: Journal of Crystal Growth, 1995, 146[1-4], 136-41