The diffusion of Hg was studied, under saturated vapor pressure conditions, as a function of time at 300 or 350C. The Hg concentration profiles comprised 2 components for short or intermediate annealing times, but this changed to a single component for long annealing times. This indicated that the diffusion of Hg in CdTe was rate-limiting and involved 2-stream diffusion. M.U.Ahmed, E.D.Jones, J.B.Mullin, N.M.Stewart: Journal of Crystal Growth, 1996, 161, 223-8