It was noted that 2 component-profiles were observed in most cases, with the profiles yielding differing diffusivities. The diffusion was rate-limiting volume diffusion which involved a slow stream and a fast stream. On the basis of pressure-dependence data, it was proposed that the slow component involved an interstitial mechanism at low Hg partial pressures, and a vacancy mechanism at high Hg partial pressures. The slow component increased systematically with etch-pit density.

M.U.Ahmed, E.D.Jones, J.B.Mullin, N.M.Stewart: Journal of Electronic Materials, 1996, 25[8], 1260-5