The shape and position of the p-n junction which was created in Hg0.79Cd0.21Te by using a scanning electron microscope was studied. The shape of the junction revealed the diffusion-like nature of the p-n conversion process. A model for the conversion was proposed which was based upon the assumption of an extremely low Hg interstitial migration energy.

E.Belas, P.Höschl, R.Grill, J.Franc, P.Moravec, K.Lischka, H.Sitter, A.Toth: Journal of Crystal Growth, 1994, 138[1-4], 940-3