Self-diffusion of Hg was studied, using radiotracers, at temperatures of between 250 and 400C. The diffusion profiles were found to have 2 components, and contact autoradiography was used to relate the tail component of bulk samples to short-circuit diffusion via dislocation arrays. A dislocation analysis was used to characterize the diffusion tails and to estimate the Hg diffusion coefficient within the defect structure. The temperature variation of the lattice diffusion coefficient was measured under a saturated Hg partial pressure and was found to obey the equation:

D(cm2/s) = 2 x 10-4 exp[-1.1(eV)/kT]

The surface concentration of diffused Hg in epitaxial samples was generally a factor of about 40 lower than that in bulk material.

N.A.Archer, H.D.Palfrey, A.F.W.Willoughby: Journal of Crystal Growth, 1992, 117, 177-82