Studies of I diffusion into CdTe and Hg0.8Cd0.2Te at 20 to 600C were compared. The concentration profiles were measured by using a radiotracer sectioning technique. It was found that the profiles comprised 4 parts which could be satisfactorily fitted by using a sum of 4 complementary error functions. The diffusion of I into HgCdTe was faster than diffusion into CdTe. The high diffusivity for the fastest component at 20C indicated that, when I was diffused from the vapor, it was not a suitable long-term stable dopant in devices which required sharp junctions.

E.D.Jones, J.Malzbender, N.Shaw, P.Capper, J.B.Mullin: Journal of Electronic Materials, 1995, 24[9], 1225-9