The diffusion of In into Cl-doped material, from the vapor phase, was studied at 470 to 970K. The diffusivity was determined by means of layer stripping and Hall-effect measurements. The data could be described by the expression:

D (cm2/s) = 1.17 x 100 exp[-1.68(eV)/kT]

when the hole concentration was between 1016 and 2 x 1016/cm3, by the expression:

D (cm2/s) = 1.4 x 10-1 exp[-1.98(eV)/kT] when the hole concentration was between 2 x 1014 and 3 x 1014/cm3, and by the expression:

D (cm2/s) = 4.02 x 10-6exp[-0.46(eV)/kT]

when the hole concentration was between 109 and 1010/cm3. The effect of the holes was explained in terms of vacancy diffusion mechanisms. It was concluded that In diffusion occurred via a dissociative mechanism, and that the solubility and activation energy of In were governed by the degree of doping. A vacancy diffusion mechanism predominated in Cl-doped material when the Cl content was at the intrinsic impurity level of about 1016/cm3.

J.M.Ivanov, G.S.Pavlova, E.L.Kanunova: Izvestiya Akademii Nauk SSSR - Neorganicheskie Materialy, 1988, 24[12], 1959-62. (Inorganic Materials, 1989, 24[12], 1681-4)