A model which was based upon a charged-vacancy mechanism was developed in order to explain In diffusion. The model predicted the correct qualitative trends for diffused samples which had been electroplated with In. It was found that the diffusion coefficient which was predicted by the model exhibited a weak dependence upon the Hg partial pressure. The coefficient also increased linearly with the In concentration, in agreement with experimental data. The present model also suggested why only a small fraction of the In was ionized, without assuming that the non-ionized fraction was tied up in the form of In2Te3.

J.Wong, R.J.Roedel: Journal of Vacuum Science and Technology A, 1991, 9[4], 2258-63