The donor-doping of a IIIA element was used to grow Hg1-xCdxTe hetero-layers that consisted of a wide band-gap (x = 0.4) layer on top of a narrow band-gap layer. Both were grown onto (111)B CdTe substrates by liquid-phase epitaxy from a Te-rich solution. The segregation coefficient of In was a decreasing function of the dopant concentration in the growth solution. The diffusion coefficients of In, as deduced by fitting electron concentration profiles in In-doped and Ga-doped n-type layers, were between 10-13 and 10-12cm2/s.

T.J.Yang, J.S.Chen, C.D.Chiang, T.B.Wu: Journal of Crystal Growth, 1995, 154[1-2], 34-40