By studying the diffusion of thin Mn markers which had been incorporated into molecular beam epitaxially grown samples (figure 19), it was possible to make quantitative investigations of deviations from stoichiometry, as well as of Cd diffusion in the crystal. There was a striking correlation between the occurrence of a minimum in electrical resistivity, in In-doped CdTe of almost perfect stoichiometry, and a minimum in the diffusivity of Mn.
A.Barcz, G.Karczewski, T.Wojtowicz, M.Sadlo, J.Kossut: Applied Physics Letters, 1998, 72[2], 206-8
Table 6
Diffusivity of Mn in CdTe at 600C
as a Function of Cd Overpressure
Cd (atm) | Diffusivity (cm2/s) |
0.11 | 8.70 x 10-14 |
0.011 | 3.35 x 10-13 |
1.64 x 10-3 | 2.80 x 10-13 |
1.35 x 10-4 | 6.55 x 10-13 |
1.57 x 10-5 | 4.05 x 10-13 |
4.98 x 10-7 | 8.67 x 10-13 |