Thin-layer deposition and serial sectioning were used to study the self-diffusion of 125Te in single crystals. At 300C, the self-diffusion coefficient was 7.2 x 10-13cm2/s; for samples without pre-treatment in Hg vapour. It was equal to 5 x 10-12cm2/s following such a heat-treatment. The overall data could be described by:

200-300C:     D (cm2/s) = 4 x 10-10 exp[-0.40(eV)/kT]

330-450C:     D (cm2/s) = 1 x 10-2 exp[-1.5(eV)/kT]

Self-Diffusion of Te in Hg(II)Te and HgSTe. F.A.Zaitov, R.V.Lutsiv: Fizika Elektron. (Lvov), 1972, 5, 23-5