Electrically detected magnetic resonance measurements were made of planar Si pn junctions which were isolated by local oxidation. Investigations of as-fabricated diodes revealed the presence of various defects. Observations were made of Pb centres at the boundary of oxide isolation, and of an isotropic Si dangling bond-related signal which was assumed to be a result of ion implantation. The E'H center, which was a H-complexed O vacancy in the SiO2 isolation, was also detected.

Defects in Planar Si pn Junctions Studied with Electrically Detected Magnetic Resonance T.Wimbauer, K.Ito, Y.Mochizuki, M.Horikawa, T.Kitano, M.S.Brandt, M.Stutzmann: Applied Physics Letters, 2000, 76[16], 2280-2