The ability of high-resolution X-ray diffraction to provide information on atomic diffusion was analyzed. Special attention was paid to Hg diffusion in heterostructures. The depth-resolved concentration profiles which were obtained were compared with those measured by secondary ion mass spectrometry. The results which were obtained by using these 2 methods were compared, and were found to differ considerably at temperatures of between 350 and 400C. The activation energy was equal to 2.65eV, according to high-resolution X-ray diffraction measurements and was equal to 1.2eV, according to secondary ion mass spectrometry. The higher value was closer to the predicted value.

Y.Avrahami, D.Shilo, N.Mainzer, E.Zolotoyabko: Journal of Crystal Growth, 1999, 198-199[1-4], 264-9

Figure 27

Bulk Diffusivity in CdTe/CdS Thin Films