Thermally-induced interdiffusion in quantum wells was investigated by means of optical and high-resolution transmission electron microscopy. Exciton Zeeman splitting data were used to study the concentration profiles of Mn ions at the interfaces. High-resolution transmission electron microscopy permitted the measurement of relative changes, in the lattice constants, due to the intermixing of Mn ions. It was concluded that the 2 methods were complementary: High-resolution transmission electron microscopy was more efficient for studying strongly interdiffused structures, while optical methods (being very sensitive to limited interdiffusion) became less efficient for treating broad interface profiles.

G.Wypiór, S.Kaiser, P.Kossacki, N.T.Khoi, J.A.Gaj, W.Gebhardt, G.Karczewski, T.Wojtowicz, J.Kossut: Semiconductor Science and Technology, 1998, 13[1], 93-6