Crystals of p-type material, doped with Ag, Tl and Se, were annealed at 700 to 900C in a Cd-vapor atmosphere. A drift of defects, thought to be Cd interstitial atoms, was observed at 50 to 160C when an electric field was applied. The drift velocity was an exponential function of temperature, and the activation energy for donor diffusion was 0.30eV.

V.P.Zayachkovskii, N.V.Koshchanovskii, N.I.Kuchma, E.S.Nikonyuk, N.I.Trotsyuk, P.I.Felchuk: Fizika i Tekhnika Poluprovodnikov, 1982, 16[10], 1914