It was shown that phase contrast in atomic force microscopy could be used to obtain adequate information on the density and distribution of antiphase domains on the surface of CdHgTe films grown by molecular beam epitaxy onto a Si(301) substrate. By comparing the atomic force microscopy phase images of the film surface with transmission electron microscopy images of structural defects in the near-surface region, the relationship between the microstructure and the micromorphology of the films was revealed.

Observation of Antiphase Domains in CdxHg1-xTe Films on Silicon by the Phase Contrast Method in Atomic Force Microscopy. I.V.Sabinina, A.K.Gutakovskii, Y.G.Sidorov, M.V.Yakushev, V.S.Varavin, A.V.Latyshev: JETP Letters, 2005, 82[5], 292-6