New and versatile etchants for the study of these materials were described. The etchants were suitable for the production of etch pits on the (111)A-type, (¯1¯1¯1)B- and (110)-type surfaces. The etch pits originated from grown-in dislocations, as well as from dislocations which were generated by mechanical deformation. The etchants detected dislocations with a high density of sub-grain boundaries, twins and inclusions. It was possible to use the etchants for both bulk material and for epitaxial layers with a suitable orientation. The etching of Hg1-xCdxTe, with x-values ranging from 0 to 0.75, was possible by varying the dilution of the solution.

I.Hähnert, M.Schenk: Journal of Crystal Growth, 1990, 101[1-4], 251-5