Infra-red microscopy, scanning electron microscopy, and energy-dispersive spectroscopy were used to characterize the etch pits which formed on CdTe and CdZnTe surfaces when exposed to E-solution, EAg, Bagai or Nakagawa etchants. It was found that some of the larger flat-bottomed triangular etch pits on the (111)A or (111)B surfaces originated from precipitates. Thus, the etch pit density could differ from the true dislocation density due to the presence of etch pits which arose from precipitates.

J.Shen, D.K.Aidun, L.L.Regel, W.R.Wilcox: Journal of Crystal Growth, 1993, 132[1,2], 351-6