An investigation was made of the microstructures of CdTe and Cd0.96Zn0.04Te samples which had been plastically deformed in uniaxial compression at a constant strain rate, at homologous temperatures of between 0.6 and 0.85. Scanning electron microscopy in the cathodoluminescence mode was used to study dislocation arrangements, and transmission electron microscopy was used to measure dislocation dissociation widths. These results were compared with those which had been reported for In-doped GaAs. It was found that, in both cases, iso-electronic doping strongly increased the yield stress and the hardening rate. A cell structure appeared at higher stresses and strains. No increase in dissociation width was observed in Cd0.96Zn0.04Te, as compared with CdTe. On the basis of macroscopic and microscopic studies, a better understanding of the hindering (by doping) of dislocation multiplication during crystal growth was obtained. It was concluded that the mechanisms which were involved could reduce the as-grown dislocation density in CdTe and GaAs.

D.Imhoff, J.P.Rivière, A.Zozime, J.Castaing: Journal of Crystal Growth, 1993, 130[3,4], 627-35