Separate investigations were made of  and  dislocations in p-type material by using deep-level transient spectroscopy. Two lines, whose amplitudes increased with increasing dislocation density, were found. The defect concentration was found to be higher in the case of  dislocations. One line, at Ev + 0.44eV, was Gaussian broadened while the other, at Ev + 0.35eV, exhibited unusual capture characteristics.

I.A.Hümmelgen, W.Schröter: Applied Physics Letters, 1993, 62[21], 2703-4