Crystallographic defects on the (111) Te surface were revealed by using a new preferential etchant. Two types of etch pit were observed. One type was small, shallow and triangular while the other was larger, deeper and pyramidal. They were suggested to be associated with α and β dislocations, respectively. Clustering of dislocation etch pits around Te precipitates and stacking fault defects was also observed.

R.K.Bagai, G.L.Seth, W.N.Borle: Journal of Crystal Growth, 1988, 91[4], 605-9