The electrical properties of n-type CdTe films, grown by molecular beam epitaxy onto (001) InSb substrates, were studied. It was shown that an observed non-uniformity in free carrier density, as a function of depth in the film, could be explained by electron trapping at dislocations; assuming that the density of dislocations decreased with distance from the substrate surface in proportion to the spatially distributed strain within the films. By comparing experimentally deduced and theoretically derived values for the maximum dislocation density, it was concluded that CdTe layers which were grown using a stoichiometric Cd/Te flux were characterized by an interfacial layer (probably In2Te3).

Influence of Misfit Dislocations on the Electrical Properties of CdTe Layers Grown by Molecular Beam Epitaxy on InSb. G.M.Khattak, G.W.Matthews, C.G.Scott, M.Yousaf: Applied Physics Letters, 2004, 84[20], 4053-5