The effect of dilute Sirtl etch, with or without light, upon CdTe crystals was studied in comparison with the effects of Inoue and Nakagawa solutions. It was recalled that it was well known that extensive defects in CdTe crystals had an effect upon material properties. The effect of the dilute Sirtl etch with light, previously used on Si, GaAs and InP, was used here for the first time on CdTe crystals. The etching solutions were used to characterize crystals with 2 different characteristics: the first group exhibited a high electrical resistivity and close to stoichiometric composition, the other group exhibited a low resistivity behavior and large Te deviations.

Revealing of Defects in CdTe Crystals by DSL Etching. F.Bissoli, J.L.Weyher, A.Zappettini, M.Zha, L.Zanotti: Crystal Research and Technology, 2005, 40[10-11], 1060-3