The generation of dislocations in CdTe crystals induced new lines into the radiative recombination spectra: the so-called dislocation photoluminescence bands. The spectral distribution of the dislocation photoluminescence bands and the spatial distribution profiles of their intensity in the vicinity of indentation points on the (111) and (001) faces were obtained. From a comparison of the profiles with the crystallographic structure of dislocations, the types of defects which were responsible for the two groups of emission bands were identified. One of the groups (with its main peak at 841nm) was controlled by the electron states of 60° dislocations with extra half-planes framed by Te atoms; referred to as Te(g) dislocations. The emission lines of the other group (with its peak at 806nm) corresponded to the ordered structures of point defects generated by steps on the screw segments of dislocation half-loops with the Cd(g) head dislocations.

Two Series of “Dislocation” Photoluminescence Bands in Cadmium Telluride Crystals. N.I.Tarbaev, G.A.Shepelskii: Semiconductors, 2006, 40[10], 1145-50